SEMICONDUCTOR STORAGE DEVICE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To increase the surface ratio of a storage node electrode contributing to an increase in capacitance. SOLUTION: A storage node electrode 134 is connected to a contact plug 117A through an upper node contact hole 124. A lower cell plate electrode composed of an N-type silicon film 123 and an N-type silicon film spacer 126 is covered with the storage node electrode 134 through the intermediary of a titanium oxide film 129a which serves as a lower capacity insulating film, and an upper cell plate electrode formed of an N-type silicon film 145 connected to the lower cell plate electrode is made to cover the storage node electrode 134 through the intermediary of a titanium oxide film 139 which serves as an upper capacity insulating film.