| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to realize an increase in the integration of a memory by a method wherein the source and drain of transistors constituting a first transistor array and the source and drain of transistors constituting another first transistor array are connected with each other through the source and drain of transistors constituting a second transistor array. SOLUTION: A plurality of first transistors constituting a first transistor array hold a source and a drain in common with each other and are respectively connected with word lines W11, W12 and W13, which are different from each other. A source or a drain of a plurality of second transistors constituting a second transistor array is connected with a source S11 or a drain S21 of the certain first transistor constituting the first transistor array and a source S12 or a drain S22 of another first transistor constituting the first transistor array. Thereby, the first transistors constituting a NAND memory cell and the second transistors constituting a NOR memory cell are provided in a memory and the high-density memory can be realized. |
