| 摘要 |
PROBLEM TO BE SOLVED: To enhance a semiconductor storage device in storage capacity by a method wherein the storage electrode of a memory cell is increased in surface area. SOLUTION: A storage electrode 30a included in a storage capacitor C'2 is equipped with a first conductor film formed on an insulating film 25 which covers a transfer transistor T'2 and a second conductor film which is formed above the first conductor film separate from it by a certain distance, dangles down partially penetrating through the first conductor film, and electrically connected to one of impurity diffusion regions 23 through the opening of an insulating film. The storage electrode 30a is made to extend over the gate electrode WL3 of the transfer transistor T'2 and an adjacent word line WL4 on a field insulating film 22, the dielectric film 31 of the storage capacitor C'2 is formed on the surface of the storage electrode 30a, and the counter electrode 32a of the storage capacitor C'2 is formed on the dielectric film 31 so as to wrap up the storage electrode 30a. |
