发明名称 |
Method for fabricating a semiconductor device with laser programable fuses |
摘要 |
A method for fabricating a semiconductor device includes the steps of: forming fuses (40) and conductive pads (46) above a semiconductor substrate (43); depositing a layer of cap oxide (44) over the fuses and the conductive pads; sintering the cap oxide; etching back the layer of cap oxide until the top surface of an insulator (42) over the fuses and the top surfaces of the conductive pads are exposed; performing electrical tests (48) by way of the conductive pads; trimming (50) at least a part of the fuses with a laser beam; depositing a silicon nitride layer (52) overall; depositing a mask coating over the silicon nitride; patterning the mask coating (54) to expose the conductive pads; and etching the mask coating and the silicon nitride layer to expose the conductive pads.
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申请公布号 |
US5641701(A) |
申请公布日期 |
1997.06.24 |
申请号 |
US19950413291 |
申请日期 |
1995.03.30 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
FUKUHARA, HIDEYUKI;MIYAI, YOICHI;MCELROY, DAVID J. |
分类号 |
H01L21/302;H01L21/461;H01L21/768;H01L21/82;H01L21/8242;H01L27/108;(IPC1-7):H01L21/70;H01L27/00 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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