发明名称 Method for fabricating a semiconductor device with laser programable fuses
摘要 A method for fabricating a semiconductor device includes the steps of: forming fuses (40) and conductive pads (46) above a semiconductor substrate (43); depositing a layer of cap oxide (44) over the fuses and the conductive pads; sintering the cap oxide; etching back the layer of cap oxide until the top surface of an insulator (42) over the fuses and the top surfaces of the conductive pads are exposed; performing electrical tests (48) by way of the conductive pads; trimming (50) at least a part of the fuses with a laser beam; depositing a silicon nitride layer (52) overall; depositing a mask coating over the silicon nitride; patterning the mask coating (54) to expose the conductive pads; and etching the mask coating and the silicon nitride layer to expose the conductive pads.
申请公布号 US5641701(A) 申请公布日期 1997.06.24
申请号 US19950413291 申请日期 1995.03.30
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 FUKUHARA, HIDEYUKI;MIYAI, YOICHI;MCELROY, DAVID J.
分类号 H01L21/302;H01L21/461;H01L21/768;H01L21/82;H01L21/8242;H01L27/108;(IPC1-7):H01L21/70;H01L27/00 主分类号 H01L21/302
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