发明名称 SEMICONDUCTOR LASER ARRAY
摘要 PROBLEM TO BE SOLVED: To attain a multi-LD type laser array where laser devices are driven with the same modulation signal to be connected in series so as to be enhanced in modulation efficiency. SOLUTION: An N-InP clad layer 6, an active layer 7, and a P-InP clad layer 8 are successively grown on a semi-insulating substrate 5, and the substrate 5 is etched as far as a halfway pant in the N-InP clad layer 6 for the formation of a stripe-like mesa structure, and a P-InP current block layer 9 and an N-InP current block layer 10 are formed on the etched part. A P<+> -InP cap layer 11 is formed thereon, and the surface of the N-InP clad layer 6 is exposed by selective etching, and an element isolation groove 12 is formed so as to reach to the semi-insulating substrate 5 penetrating through the N-InP clad layer 6. A P-side electrode 13 and an N-side electrode 14 are formed for each device, and the P-side electrode 13 and the N-side electrode 14 of the adjacent devices are connected together.
申请公布号 JPH09167878(A) 申请公布日期 1997.06.24
申请号 JP19950347016 申请日期 1995.12.14
申请人 NEC CORP 发明人 YAMADA HIROHITO
分类号 H01S5/00;H01S5/02;H01S5/042;H01S5/40;(IPC1-7):H01S3/18;H01S3/096 主分类号 H01S5/00
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