摘要 |
<p>PROBLEM TO BE SOLVED: To provide a technique of effectively eliminating the warpage occurring in the thermal shrinkage, etc., of the semiconductor substrate and recording layer of a recording medium for a scanning type memory device. SOLUTION: The recording medium 1 for the semiconductor memory device of a scanning type which executes writing/reading out of information by many microprobes 32 is constituted by forming a conductive layer 12 on the one surface of the semiconductor substrate 11, forming the recording layer atop the layer and forming a warpage preventive layer 14 on the other surface. The recording layer 13 and the camber preventive layer 14 are formed of the same materials.</p> |