发明名称 RECORDING MEDIUM FOR SEMICONDUCTOR MEMORY DEVICE AND ITS MANUFACTURE
摘要 <p>PROBLEM TO BE SOLVED: To provide a technique of effectively eliminating the warpage occurring in the thermal shrinkage, etc., of the semiconductor substrate and recording layer of a recording medium for a scanning type memory device. SOLUTION: The recording medium 1 for the semiconductor memory device of a scanning type which executes writing/reading out of information by many microprobes 32 is constituted by forming a conductive layer 12 on the one surface of the semiconductor substrate 11, forming the recording layer atop the layer and forming a warpage preventive layer 14 on the other surface. The recording layer 13 and the camber preventive layer 14 are formed of the same materials.</p>
申请公布号 JPH09161339(A) 申请公布日期 1997.06.20
申请号 JP19950328299 申请日期 1995.11.22
申请人 HEWLETT PACKARD CO (HP) 发明人 MARUYAMA TAKAHISA;SAKAI IKUO
分类号 B42D15/10;G06K19/077;G11B9/00;G11B9/14;H01L27/10;(IPC1-7):G11B9/00 主分类号 B42D15/10
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