| 摘要 |
FIELD: integrated microelectronics; single-channel and mutually complementing MIS integrated circuits for digital, linear, and analog applications. SUBSTANCE: process involves sequential formation of silicon nitride and polycrystalline silicon of gates and separating regions between drains and stoppers in layers, doping of drain , source, and stopper regions, removal of silicon nitride from separating regions between drains and stoppers, thermal oxidation, removal of silicon nitride, opening of contact cuts to diffusion regions, and production of metal connections. EFFECT: improved yield of integrated circuits and their stability to external effects due to planar structure and high concentration of impurities in stopper regions. |
