| 摘要 |
<p>In a memory device including an array of memory cells, each memory cell having more than two possible states, a method for programming a memory cell to a desired state is disclosed. The method comprises a control engine programming a subset (220), wherein the characterization information indicates programming characteristics of a representative memory cell of the array of memory cells (225). The control engine then uses the characterization information to directly program the memory cell to approximately the desired state (230) without performing a program verify operation.</p> |
