发明名称 Surface acoustic wave device
摘要 The surface acoustic wave device has an electrode made up of a first and second film on a substrate. The first film is made of aluminium (Al) or Al plus at least another element and the second film is made of a metal which has a greater diffusion coefficient in Al than Al itself.
申请公布号 DE19651582(A1) 申请公布日期 1997.06.19
申请号 DE1996151582 申请日期 1996.12.12
申请人 FUJITSU LTD., KAWASAKI, KANAGAWA, JP 发明人 NISHIHARA, TOKIHIRO, KAWASAKI, KANAGAWA, JP;UCHISHIBA, HIDEMA, KAWASAKI, KANAGAWA, JP;IKATA, OSAMU, KAWASAKI, KANAGAWA, JP;SATOH, YOSHIO, KAWASAKI, KANAGAWA, JP
分类号 C23C14/14;H03H3/08;H03H9/02;H03H9/145;(IPC1-7):H03H9/145 主分类号 C23C14/14
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