FORMING METHOD OF LOW TEMPERATURE GATE OXIDE FILM

摘要

A fabrication method of low-temperature oxide for forming a gate is provided to form the low-temperature oxide of good quality. The method comprises the steps of: growing a first oxide layer(20) on a silicon wafer(10) by high-pressure oxidation at 600 deg.C in O2 gas; and depositing a second oxide layer(30) on the first oxide layer(20) by PECVD(Plasma Enhanced Chemical Vapor Deposition), LPCVD(Low Pressure CVD) or sputtering method at low-temperature less than 600 deg.C. Thereby, it is possible to increase mobility and decrease an oxidation time by forming the low-temperature oxide of good quality.2