| 摘要 |
The present invention relates to a method of fabricating a semiconductor laser diode suitable for preventing catastrophic optical damage. This method includes the steps of forming a second conductive current blocking layer on a first conductive semiconductor substrate; etching the current blocking layer in a direction of dove tail to expose the substrate; growing a first conductive AlGaAs layer, a first conductive AlGaAs layer, a first conductive AlGaAs layer, and a first conductive GasAs layer all over the substrate where the current blocking layer is formed; selectively etching the current blocking layer, the first conductive AlGaAs layer, the first conductive AlGaAs layer, the second conductive AlGaAs, and the second conductive GasAs layer to form a mesa with a given width and a double channel; and growing a second conductive AlGaAs layer and a first conductive AlGaAs layer on the region except the channel, excluding the double channel and the mesa; and forming a second conductive GaAs layer all over the substrate.
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