发明名称 |
Method and apparatus for thin films formation by CVD |
摘要 |
<p>A method and apparatus for ramping down the deposition pressure in a SACVD process. The present invention also provides a method and apparatus for subsequently ramping up the pressure for a PECVD process in such a manner as to prevent unwanted reactions which could form a weak interlayer interface. In particular, the deposition pressure in the SACVD process is ramped down by stopping the flow of the silicon containing gas (preferably TEOS) and/or the carrier gas (preferably helium), while diluting the flow of ozone with oxygen. A ramp down of the pressure starts at the same time. The diluting of the ozone with oxygen limits reactions with undesired reactants at the end of a process. <IMAGE></p> |
申请公布号 |
EP0778358(A1) |
申请公布日期 |
1997.06.11 |
申请号 |
EP19960308855 |
申请日期 |
1996.12.05 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
ROBLES, STUARDO;SIVARAMAKRISHNAN, VISWESWAREN;GALIANO, MARIA;KITHCART, VICTORIA |
分类号 |
H01L21/31;C23C16/40;C23C16/44;C23C16/455;C23C16/52;H01L21/316;(IPC1-7):C23C16/40 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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