发明名称 |
Method of manufacturing semiconductor device having multilevel interconnection structure |
摘要 |
A semiconductor device has a multilayered structure that includes an insulating interlayer formed on a lower wiring layer, a semiconductor substrate, and a via hole. The semiconductor device is manufactured by a method that includes plasma etching at least one surface of the insulating interlayer the in an atmosphere having as a major component either a carbonless, chlorine-based gas or a carbonless, chlorine-based gas and an inactive gas in order to remove contaminates that would otherwise promote reactivity with aluminum CVD on the surface of the insulating interlayer.
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申请公布号 |
US5637534(A) |
申请公布日期 |
1997.06.10 |
申请号 |
US19930172717 |
申请日期 |
1993.12.27 |
申请人 |
KAWASAKI STEEL CORPORATION |
发明人 |
TAKEYASU, NOBUYUKI;YAMAMOTO, HIROSHI;KAWANO, YUMIKO;KONDOH, EIICHI;KATAGIRI, TOMOHARU;OHTA, TOMOHIRO |
分类号 |
H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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