| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for setting the operation conditions of a nonvolatile semiconductor storage device (EEPROM), which has a metal-oxide film-semiconductor field effect transistor(MOSFET) as component, prior to the completion of the nonvolatile semiconductor storage device. SOLUTION: When the manufacture of a MOSFET is completed prior to the completion of the manufacture of an EEPROM, parameters to be used for the operation simulation of the EEPROM are obtained from the characteristic measurement of the MOSFET, operation simulation of the EEPROM is performed by using the parameters, and operation simulation results are obtained. Then, from the operation simulation results, EEPROM operation conditions are obtained.</p> |
