| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method and a device for analyzing a semiconductor wafer, which can analyze the impurities attached on the semiconductor wafer in the stage of manufacturing processes in high detecting sensitivity by the observation on the spot. SOLUTION: This analyzing device analyzes the surface of a semiconductor wafer 10 by an infrared reflection absorbing method. In this case, a mirror 12 reflecting infrared rays is arranged on the surface side of the semiconductor wafer 10. The infrared rays are cast from the rear surface of the semiconductor wafer 10, and the infrared rays are reflected from the mirror 12 at the surface side of the semiconductor wafer 10. The infrared rays, which are emitted from the rear surface of the semiconductor wafer 10, are detected, and the analysis of the infrared reflection and absorption is performed.</p> |
