| 摘要 |
PROBLEM TO BE SOLVED: To realize an SiC electrode having flatness and ohmic character without giving a high temperature thermal treatment even though the carrier concentration is an SiC of a low concentration by providing P-type SiC and a particular TiOx for electrode. SOLUTION: In an ohmic electrode 11 formed on SiC 10, the SiC 10 is a P-type SiC, the electrode 11 is TiOx (but 0.01<x<2), a carrier concentration of P-type SiC 10 is at least 2×10<14> /cm<3> . And on the P-type SiC 10, under the atmosphere of O2 gas partial pressure, sputtering is performed with a predetermined electrode pattern with Ti as a target; and a heat treatment is performed at the temperature of 300 to 700 deg.C after the sputtering and then an SiC electrode is formed. Therefore, no high temperature treatment is required, so that a flat, ohmic electrode can be formed on SiC thereby making a very refined SiC semiconductor element.
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