Halbleiterbauelement mit Schottkykontakt

摘要

The invention relates to a semiconductor device having a Schottky contact on a silicon layer (1), which contact has a metal silicide layer (2) formed in a contact window (13) of a surface passivation (5). The surface passivation comprises a first passivation layer (15) and a second passivation layer (16) which defines the contact window (3). The boundary between the metal silicide layer (2), a guard ring (6) and the surface passivation is moved towards the middle of the guard ring by the second passivation layer (16). Consequently, increased short-circuit resistance, a reduced risk of an early breakdown or of a formation of a channel are achieved.