Verfahren zur Herstellung eines Halbleiterbauelementes sowie Halbleiterbauelement

摘要

A method of making a contact for a semi conductor device comprises depositing an insulating film 2 on a silicon substrate 1, forming a contact hole, forming a barrier metal layer 4, forming a first metal layer 5 containing no silicon or very little silicon and forming a second metal layer 6 containing silicon on top of the first metal layer.