| 摘要 |
<p>A microwave excitation plasma processing apparatus includes a vacuum container (1), a gas supply pipe (5), a dielectric window (9), a rectangular waveguide (11), and a microwave oscillator. The vacuum container (1) has a plasma generating chamber (3) at its upper portion and a processing chamber (4) which is formed under the plasma generating chamber (3) and in which a processing target member (13) is arranged. The gas supply pipe (5) supplies a process gas into the plasma generating chamber (3). The dielectric window (9) is arranged in an opening of an upper wall portion of the vacuum container (1). The waveguide (11) is arranged on the upper wall portion of the vacuum container (1) including the dielectric window (9), and has a surface (H surface) perpendicular to a direction of electric field of a microwave to oppose to the dielectric window, surfaces (E surfaces) parallel to the direction of electric field of the microwave and extending in a direction perpendicular to the H surface, and a reflecting surface provided on a side opposite a microwave introducing side perpendicularly to the H and E surfaces to reflect the microwave. The microwave oscillator introduces the microwave into the waveguide (11). The waveguide (11) has two slits which are formed in the H surface opposing the dielectric window (9) and located in the vicinity of the E surfaces, respectively, which extend parallel or substantially parallel to the E surfaces. Each of the slits has a width which is smaller on a side closer to the reflecting surface. This microwave excitation plasma processing apparatus can generate a stable plasma in wide ranges of microwave outputs and pressures in the plasma generating chamber of the vacuum container. A uniform plasma is generated in the plasma generating chamber to etch or ash a processing target member in the processing chamber located under the generating chamber efficiently. <IMAGE></p> |
