Hydrogen-activated thin film switching device

摘要

A description is given of a switching device (1) comprising a transparent substrate (3), a reflective switching film (5) of yttrium having a thickness of 500 nm and a palladium layer (7) having a thickness of 5 nm. Using hydrogen gas at atmospheric pressure and at room temperature, a transparent, semiconductive film (5) of YH3 is formed, which is converted to a metallic mirror-like film (5) of YH2 by exposure to heat. The conversion of YH2 into YH3 is reversible and can for example be used in an optical switching element and in thin displays.