发明名称 Method of making a dielectric chuck
摘要 A method of making a dielectric chuck for securing a semiconductor wafer on a pedestal having multiple apertures for the introduction of cooling gas beneath the wafer. The wafer is held by electrostatic force against a laminate of an electrode layer sandwiched between two dielectric layers in accordance with the method, such that the laminate presents a planar surface to the wafer for a substantial distance beyond the outer edge of the electrode layer. The laminate construction method ensures that a large wafer area beyond the outer edge of the electrode is in contact with the laminate, to minimize cooling gas leakage near the edge, and provides a longer useful life by increasing the path length of dielectric material between the electrode layer and potentially damaging plasma material surrounding the chuck.
申请公布号 US5634266(A) 申请公布日期 1997.06.03
申请号 US19950449135 申请日期 1995.05.24
申请人 APPLIED MATERIALS INC. 发明人 SHERSTINSKY, SEMYON;SHAMOUILIAN, SHAMOUIL;BIRANG, MANOOCHER;MAK, ALFRED;TAM, SIMON W.
分类号 B23Q3/15;C23C16/458;H01L21/00;H01L21/683;H02N13/00;(IPC1-7):H01R43/00 主分类号 B23Q3/15
代理机构 代理人
主权项
地址