发明名称 |
Method of making a dielectric chuck |
摘要 |
A method of making a dielectric chuck for securing a semiconductor wafer on a pedestal having multiple apertures for the introduction of cooling gas beneath the wafer. The wafer is held by electrostatic force against a laminate of an electrode layer sandwiched between two dielectric layers in accordance with the method, such that the laminate presents a planar surface to the wafer for a substantial distance beyond the outer edge of the electrode layer. The laminate construction method ensures that a large wafer area beyond the outer edge of the electrode is in contact with the laminate, to minimize cooling gas leakage near the edge, and provides a longer useful life by increasing the path length of dielectric material between the electrode layer and potentially damaging plasma material surrounding the chuck.
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申请公布号 |
US5634266(A) |
申请公布日期 |
1997.06.03 |
申请号 |
US19950449135 |
申请日期 |
1995.05.24 |
申请人 |
APPLIED MATERIALS INC. |
发明人 |
SHERSTINSKY, SEMYON;SHAMOUILIAN, SHAMOUIL;BIRANG, MANOOCHER;MAK, ALFRED;TAM, SIMON W. |
分类号 |
B23Q3/15;C23C16/458;H01L21/00;H01L21/683;H02N13/00;(IPC1-7):H01R43/00 |
主分类号 |
B23Q3/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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