| 摘要 |
The present invention provides a silicon wafer cleaning fluid, comprising 35 to 65% by weight of HNO3, 0.05 to 0.5% by weight of HF, 0.05 to 0.5% by weight of HCl, 0.002 to 0.1% by weight of a surface-active agent, and water and a silicon wafer cleaning method, comprising treating the surface of a silicon wafer with said cleaning fluid. According to the present invention, etching of the silicon wafer surface can be carried out simply with the amount of the etching being controlled to several tens A, and particularly about 20 to 30 ANGSTROM , and the smoothness of the surface is not damaged. In addition, contamination with gold and other heavy metals of the order of 1012 atoms/cm2 can be decreased to not more than 1/100.
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