发明名称 |
Silicon carbide LOCOS vertical MOSFET device |
摘要 |
A silicon carbide LOCOS vertical MOSFET formed on a silicon carbide substrate with portions of epitaxial layers defining the various transistor regions, rather than defining the regions with implants and diffusion. Because of the low diffusion rate in silicon carbide, the LOCOS operation can be performed after the doped epitaxial layers are formed.
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申请公布号 |
US5635732(A) |
申请公布日期 |
1997.06.03 |
申请号 |
US19950370142 |
申请日期 |
1995.01.09 |
申请人 |
MOTOROLA |
发明人 |
DAVIS, KENNETH L.;WEITZEL, CHARLES E. |
分类号 |
H01L21/04;H01L21/336;H01L29/12;H01L29/24;H01L29/78;(IPC1-7):H01L31/031;H01L29/76;H01L29/94;H01L31/062 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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