发明名称 |
Semiconductor device comprising a salicide structure |
摘要 |
After formation a gate electrode and source/drain regions, N ions or O ions are implanted into a predetermined region using a resist mask, and a Ti layer is deposited on the entire face of a substrate, and then the Ti layer is silicided in self-alignment by a heat treatment, whereby a high resistivity TixNySiz mixing layer is formed the predetermined region on the gate electrode and the source/drain regions 10, and a low resistivity TiSi2 layer 12 is formed on another region.
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申请公布号 |
US5635746(A) |
申请公布日期 |
1997.06.03 |
申请号 |
US19950575194 |
申请日期 |
1995.12.20 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KIMURA, MASATOSHI;SUGIYAMA, MASAO |
分类号 |
H01L29/78;H01L21/285;H01L21/336;H01L21/8234;H01L21/8238;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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