| 摘要 |
A fabrication method of thin film EL(electro luminescence) devices and structure thereof are disclosed. The method comprises the steps of: forming an ITO(indium tin oxide) transparent electrode(2) on a transparent substrate(1); forming a first insulator(3) by reactive sputtering method using a silicon target; depositing a light emitting layer(4) of ZnS by E-beam or sputtering; etching the light emitting layer(4) using PrMnO3 pattern(5) as a mask; depositing PrMnO3 film(5') again; depositing a second insulator(6) by reactive sputtering; and depositing an Al electrode(7) by thermal deposition on the second insulator(6) and etching the Al electrode(7) to vertically form to the ITO electrode(2).
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