| 摘要 |
A device with a low resistance zone having confinement, superior reproducibility, and a very high yield comprises a plurality of semiconductor layers, wherein layer resistivity is changed by annealing. The semiconductor layers include a low resistance zone (44) having a high activation coefficient of acceptor impurities and a high resistance region (45) having a low activation coefficient of acceptor impurities. The activation coefficient is controlled by irradiation with laser light. In addition, laser light is irradiated and absorbed into the semiconductor layers in one part of, or the entire, semiconductor layers, such that layer resistivity in the irradiated regions is changed by annealing resulting from such irradiation. <IMAGE> <IMAGE> |
