| 发明名称 |
PROCESS FOR THE PREPARATION OF SIC-TIB2 COMPOSITE SINTERING MATERIAL |
| 摘要 |
mixing 10-60 wt.% of TiB2, less than 2 wt.% of boron or boron compound, 0.5-5.0 wt.% of phenol resin or carbon, and SiC and sintering the composition at 2000-2200 degrees centigrade.
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| 申请公布号 |
KR970008713(B1) |
申请公布日期 |
1997.05.28 |
| 申请号 |
KR19940028896 |
申请日期 |
1994.11.04 |
| 申请人 |
KOREA TUNGSTEN MINING CO.,LTD |
发明人 |
YUN, JAE-DON;CHOE, DUK-SOON;JUNG, SOO-JONG;PARK, KWON-HEE |
| 分类号 |
C04B35/565;C04B35/58;(IPC1-7):C04B35/565 |
主分类号 |
C04B35/565 |
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