| 摘要 |
A photodiode array includes an insulating film; a semiconductor layer of a first conductivity type provided on the insulating film; a positive electrode and negative electrode formed on the semiconductor layer; and a plurality of pn junctions formed in series in the semiconductor layer between the positive and negative electrodes. The pn junctions are formed by a diffusion layer of a second conductivity type formed in the semiconductor layer and another diffusion layer of the first conductivity type formed in the diffusion layer, so as to terminate on the insulating film.
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