| 摘要 |
<p>PROBLEM TO BE SOLVED: To form many hole patterns lined up at narrow spacings by using a halftone type phase shift mask. SOLUTION: The exposure of the patterns 4 in the main peak position expressed in (B) is made possible by exposing at the focusing position when one side of the light transmissive parts of the mask patterns is set at 0.4μm and the spacing at 0.4μm as well. The exposure is executed by moving a substrate formed with a resist layer in such a manner that the focal position moves from the position to a + direction or -direction and the side peak is stronger than the main peak in the position, by which the patterns 5 by the side peak shown in (C) are formed. The exposure is executed by moving the focus, by which the superposition of the two patterns and the formation of the holes of the narrow spacings as show in (D) are made possible. The assurance of the practicable depth of focus is possible as well.</p> |
