| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of reducing the number of signal lines and simply controlling them by providing a decoder, a cell array, a dummy array, a signal generation means and an input/output means. SOLUTION: A buffer 6 outputs a signal Ai by the signal receiving from the outside, and a row decoder 7 specifies the row of the cell array 10. A column decoder 8 specifies the column of the cell array 10. Thus, a memory cell in the cell array 10 is specified. An SRAM is provided with the dummy array 11 in addition to the cell array 10. The dummy array 11 specifies the memory cell by a word line sent from the row decoder 7. The dummy array 11 sends out prescribed dummy data to the buffer 6. The buffer 12 outputs the signal OUTD to a circuit 4 according to the signal CE sent from the circuit 4. The circuit 4 generates the signal CE to send out it to the row decoder 7, the column decoder 8 and the buffer 9.</p> |
