发明名称 MANUFACTURE OF PHOTOELECTRIC CONVERSION DEVICE
摘要 PROBLEM TO BE SOLVED: To enhance the conversion efficiency of a photoelectric conversion device by a method wherein a layer containing a cadmium telluride as its main component is formed on a layer containing a cadmium sulfide, which is formed of a precursor containing at least an organocadmium sulfide complex, as its main component by an electrolytic precipitation method. SOLUTION: An organocadmium sulfide complex (a complex) is dissolved in an N,N-dimethylformamide (a DMF) and thereafter, the complex is applied on a glass substrate (a substrate) and the DMF is evaporated. Then, the substrate is heated and with the complex on the substrate vaporized, complex vapor is thermally decomposed on the substrate of a photoelectric conversion element formed with a trasnsparent electrode and a CdS layer is formed. Then, a TeO2 is saturated with a CdSO4 aqueous solution prepared using an H2 SO4 as a tellurium source and a CdTe layer is formed on the substrate using a plating solution by an electrolytic precipitation method. Then, a carbon electrode mixed with copper fine powder is formed on the CdTe layer, is fired to diffuse copper in the CdTe layer, the CdTe layer is formed as a P-type semiconductor layer and moreover, an electrode is formed.
申请公布号 JPH09139517(A) 申请公布日期 1997.05.27
申请号 JP19950298037 申请日期 1995.11.16
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TAKADA KAZUNORI;IWAMOTO KAZUYA;KONDO SHIGEO
分类号 H01L21/288;H01L31/04;H01L51/42 主分类号 H01L21/288
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