THIN FILM CAPACITOR AND SEMICONDUCTOR STORAGE DEVICE UTILIZING THE CAPACITOR

摘要

PROBLEM TO BE SOLVED: To provide a thin film capacitor which assures small leak current and high dielectric constant and also provide a semiconductor storage device having a small area and large capacity thin film capacitor. SOLUTION: In a thin film capacitor holding a dielectric material film 243 having the perovskite composition, an electric conductive oxide of the perovskite structure expressed by ABO3 is used as an electrode material of this capacitor. Here, the A site structure elements are at least two kinds selected from alkali earth metal and rare metal, while the B site structure element is at least a kind selected from transition metals. A barrier height of interface lattice matching may be optimized by selecting kind of each structural element and its composition of ABO3 .