发明名称 PRESS JOINT TYPE POWER SEMICONDUCTOR DEVICE BUILT IN A PLURALITY OF SEMICONDUCTOR ELEMENTS
摘要 <p>PROBLEM TO BE SOLVED: To provide a cold welding type power semiconductor device wherein a positioning jig as a mold is unnecessary for positioning a plurality of semiconductor elements, assembling is simplified, and arrangement of signal wiring without insulation coating film is possible. SOLUTION: The device is provided with a first insulating frame 3 of a lattice type which surrounds individually a plurality of semiconductor elements arranged on the same plane, and positions the respective semiconductor elements. First and second hard metal electrode plates 4, 3 are formed on both surfaces of the respective semiconductor elements. A first electrode part member 5 is formed in contact with the first hard metal electrode plates 4. On the first insulating frame 2 of a lattice type, a second insulating frame 6 of a lattice type which positions the second hard metal electrode plates 3 is stacked. A second electrode part member 7 having a lattice type trench into which the lattice type frame part of the second insulating frame 6 is fitted is arranged for positioning the frame.</p>
申请公布号 JPH09139395(A) 申请公布日期 1997.05.27
申请号 JP19960228653 申请日期 1996.08.29
申请人 TOSHIBA CORP 发明人 NISHITANI KAZUNOBU
分类号 H01L25/07;H01L21/52;H01L25/18;(IPC1-7):H01L21/52 主分类号 H01L25/07
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