| 摘要 |
<p>PROBLEM TO BE SOLVED: To enable obtaining a high voltage for rewriting and to reduce the power consumption of a whole system even if power source voltage drops. SOLUTION: This EEPROM is provided with a memory cell array of an NAND cell type consisting of non-volatile memory cells electrically rewritable, an amplitude expanding oscillator 2 consisting of a ring oscillator and a level shifter, and a booster circuit 1 consisting of plural boosting cells and boosting input voltage. In this case, the amplitude-expanding oscillator 2 is driven by a second voltage VDD higher than a first voltage Vcc from a power source, outputs clocks CLK, CLKB of a second voltage amplitude, the boosting circuit 1 inputs the clocks CLK, CLKB of the second voltage amplitude and it is driven by the second voltage VDD.</p> |
