| 摘要 |
PROBLEM TO BE SOLVED: To execute the process to be added to prevent leak current between the upper and lower electrodes of a capacitance without giving any influence on formation of the other element such as MOSFET or the like. SOLUTION: In this method, a capacitance having a lower electrode formed by the process common to the gate electrode of MOSFET is manufactured. In this case, after an upper electrode layer 106 is formed, an insulating film 107 is formed and a capacitance insulating film 105 other than the predetermined region which becomes the upper electrode of capacitance, an upper electrode layer 106 and an insulating film 107 on the upper electrode are removed by the photolithography. A side wall formed of the insulating film 107 of the upper electrode is formed simultaneously with formation of side wall of MOSFET and leak between the upper and lower electrodes of capacitance can be prevented. Moreover, since the insulating film 107 on the upper electrode formed to prevent leak is never left on the gate electrode of MOSFET, the gate electrode of MOSFET can be formed with an excellent controllability without receiving any influence of the insulating film. |
