发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor device having a planar structure of multilayer interconnections, in which moisture is stopped from entering through fuse holes in order to prevent the degradation of device characteristics. SOLUTION: An opening 11 is provided in a cover film 10, an insulating film, etc., to blow a fuse 3, and it is surrounded by a dummy wiring layer 5X in a horizontal plane. The dummy wiring layer 5X is in the same plane as an SOG film 7 for flattening, and thus the former causes interruption in the continuity of the latter. Even if the SOG film 7 is partially exposed in the opening 11, the dummy circuit layer 5X serves as a shield so that moisture can not enter the circuit inside.</p>
申请公布号 JPH09139431(A) 申请公布日期 1997.05.27
申请号 JP19950296551 申请日期 1995.11.15
申请人 NEC CORP 发明人 WATANABE TAKESHI
分类号 H01L23/52;H01L21/316;H01L21/3205;H01L21/82;H01L23/00;H01L23/525;(IPC1-7):H01L21/82;H01L21/320 主分类号 H01L23/52
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