| 摘要 |
PROBLEM TO BE SOLVED: To obtain an overcurrent detection circuit in which a current can be detected by a mirror MOSFET. SOLUTION: An overcurrent detection circuit is constituted in such a way that a MOSFET whose structure is identical to that of a main MOSFET 101 is used as an element 103 for current detection. Thereby, the inclination of the saturation current-temperature characteristic of the main MOSFET 101 and the inclination of a detection level-temperature characteristic are made nearly equal. When a detection-level upper limit is set by a temperature in one arbitrary point, the overcurrent detection circuit can be designed in such a way that the non-detection of an overcurrent is not generated in the whole temperature range, and an overcurrent detection level can be designed extremely easily. |
