DIFFUSION BARRIER LAYER TITANIUM NIGHT RIDE LAYER FORM OF SEMICONDUCTOR DEVICE

摘要

A method of forming a titanium nitride layer for blocking diffusion in a semiconductor device, which is for the purpose of preventing atom diffusion between upper and lower layers, includes the steps of loading a wafer 1 on which the titanium nitride layer will be formed into a sputtering chamber having a titanium target, and applying a reverse bias voltage having high frequency to the wafer 1 in the ambient of nitrogen gas inside the chamber, to form the titanium nitride layer 20, thereby allowing the titanium nitride layer to be used as a diffusion blocking layer.