| 摘要 |
PURPOSE:To reduce the necessary pattern area and miniaturize a chip wherein a semiconductor integrated circuit is formed, by connecting a silicon substrate and a resistor of polycrystalline silicon by using the same aperture part, CONSTITUTION:A diode 2 and a holding resistor 3 are formed in an element region surrounded by an isolation region 15 which penetrates an N<+> buried diffusion layer 12 and an N<-> epitaxial layer 13 formed on a silicon substrate 11 and reaches the silicon substrate 11. The resistor 3 is formed of a polycrystalline silicon layer 17 stretching from the outside of the element region, and a Schottky barrier diode 2 is formed by using the N<-> epitaxial layer 13 and Pt-Si films 19, 20 formed thereon. The resistor 3 and the diode 2 are connected with a common metal wiring 22 in the same region. Barrier 21 like Pt-W is formed between the polycrystalline silicon layer 17 for the resistor and the Pt-Si film 19 and between the Pt-Si film 20 and the metal wiring 22. By arranging, in this manner, the leading-out part of the polycrystalline silicon layer 17 for the holding resistor 3 in the same aperture part as the forming region of the diode 2, the mutual connection region are remarkably integrated. |
