Method of making combined JFET & MOS transistor device

摘要

A transistor circuit is formed on a substrate having source and drain electrodes and multiple current-controlling gates. The two current-controlling gates are separated by spacer oxide material. The first gate is an metal oxide semiconductor (MOS) gate that is insulated from the substrate by a layer of gate oxide. The second gate is a junction field effect transistor (JFET) gate contiguous to the MOS gate that is insulated from the MOS gate by a layer of spacer oxide.