| 摘要 |
PROBLEM TO BE SOLVED: To reduce cross talk noise by providing a second semiconductor chip which has a greater area than a first semiconductor device and has a wiring layer and a device region in a portion other than the portion covered by a device region of the first semiconductor device. SOLUTION: A first semiconductor device 1, and a second semiconductor device 5 which faces and is electrically connected with the first semiconductor device 1 via a bump 4, are provided. The second semiconductor device 5 has a greater area than the first semiconductor device 1, and has a wiring layer and a chip region in a portion other than the portion covered by a device region 7 of the first semiconductor device 1. That is, the wiring layer and the device region 8 are not formed in the portion, on the second semiconductor device 5, covered by the device region 7 of the first semiconductor device 1. Thus, cross talk noise between signal lines of the semiconductor device 1 and 5 may be eliminated.
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