发明名称 |
Method of fabricating high threshold metal oxide silicon read-only-memory transistors |
摘要 |
A method of forming ROM transistor memory cell including not forming lightly doped regions in the semiconductor substrate for some of the memory cells so as to form one type of memory cell and forming the lightly doped regions in another type of memory cell.
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申请公布号 |
US5631180(A) |
申请公布日期 |
1997.05.20 |
申请号 |
US19950479926 |
申请日期 |
1995.06.07 |
申请人 |
ZILOG, INC. |
发明人 |
GYURE, ALEX;BERG, JOHN;CARVER, DAMIAN;MANOS, PETE |
分类号 |
H01L21/8246;H01L27/112;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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