PROCESSING METHOD OF WAFER

摘要

PROBLEM TO BE SOLVED: To accurately form a channel plate by exposing parts of a substrate on which a silicon nitride film is formed by patterning the nitride film and forming V-shaped grooves by etching the exposed parts. SOLUTION: After a silicon nitride layer 141 is formed on a substrate 11 through a thermally nitriding process and parts of the substrate 11 are exposed by patterning the nitride layer 141 while the temperature of the layer 141 is maintained at 900-1,200 deg.C under the atmospheric pressure in a nitrogen atmosphere or a mixed atmosphere of nitrogen and ammonia. Then V-shaped grooves 15 and 13 are formed simultaneously with a tapered channel 17 by etching the exposed parts with a KOH etchant. Therefore, a channel plate can be formed accurately.