| 摘要 |
PROBLEM TO BE SOLVED: To make such an etching gas that becomes the object of fluorocarbon gas control unnecessary by etching a second clad layer and an active layer composed of gallium nitride semiconductors with an etching gas containing boron trichloride and chlorine. SOLUTION: After a sapphire substrate 100 is set on a quartz plate 17, a vacuum chamber 11 is evacuated to a vacuum. Then boron trichloride BC3 and chlorine C2 are respectively introduced to the chamber 11 at rates of 50sccm and 5sccm through a first reaction gas introducing pipe 13 and a second reaction gas introducing pipe 13 and high-frequency electric power of 13.56MHz in frequency is supplied between first and second electrodes. As a result, the plasma of the reaction gases is generated in the chamber 11 and the laminated body of the gallium nitride semiconductors can be dry-etched. Therefore, a dry etching method which can etch a wide range of semiconductors, especially, GaN compound semiconductors without using such an etching gas that becomes the object of the fluorocarbon gas control can be realized. |
