| 发明名称 |
Semiconductor device with improved insulating/passivating layer |
| 摘要 |
<p>A semiconductor device with improved insulating and passivating layer comprises: a GaAs substrate; a semiconductor device formed on the surface of the substrate; an insulating and passivating layer of InGaF positioned on at least portions of the device and crystallographically lattice matched to the substrate.</p> |
| 申请公布号 |
EP0773579(A2) |
申请公布日期 |
1997.05.14 |
| 申请号 |
EP19960117872 |
申请日期 |
1996.11.12 |
| 申请人 |
MOTOROLA, INC. |
发明人 |
ABROKWAH, JONATHAN K.;THOMPSON, DANNY L.;WANG, ZHIGUO |
| 分类号 |
H01L29/78;H01L21/28;H01L21/314;H01L21/336;H01L23/29;H01L29/24;H01L29/51;H01L29/80;(IPC1-7):H01L21/28;H01L21/335 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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