发明名称 |
Semiconductor device comprising an over-temperature detection element for detecting excessive temperatures amplifiers |
摘要 |
A semiconductor device includes on a semiconductor substrate an output transistor which is composed of a collector region, a first base region and a first emitter region, and a temperature detection transistor composed of the collector region, a second base region and a second emitter region. The output transistor is provided at a center of the collector region of the semiconductor substrate. A vacant region is formed on a center of the output transistor, and the temperature detection transistor is provided in the vacant region.
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申请公布号 |
US5629551(A) |
申请公布日期 |
1997.05.13 |
申请号 |
US19950503688 |
申请日期 |
1995.07.18 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NAKURA, HIDEAKI;YOKOZAWA, MASAMI;TSUBAKI, KAZUHIKO;YOSHIMURA, MASASUKE |
分类号 |
H01L27/02;(IPC1-7):H01L29/47;H01L29/812;H01L27/095 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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