发明名称 |
Method for forming conductive line of semiconductor device |
摘要 |
A method for forming a conductive line uses a fluorine doped oxide layer as an insulating layer between conductive lines. The method comprises the steps of: (a) forming a fluorine doped oxide layer on a semiconductor substrate on which a lower structure is formed; (b) etching the oxide layer of the region where a conductive line is to be formed, thereby forming a trench; (c) forming an insulating layer on the overall surface of the resultant substrate; depositing conductive material on the resultant substrate; and (e) etching back the conductive material so that the conductive material is left on the trench only, thereby forming a conductive line. In this method, the conductive line is formed of aluminum-containing material and the insulating layer is formed of silicon dioxide. In the present invention, the insulating layer is interposed between the fluorine doped oxide layer and the aluminum-containing conductive line and thus the conductive line is free from corrosion.
|
申请公布号 |
US5629238(A) |
申请公布日期 |
1997.05.13 |
申请号 |
US19950557534 |
申请日期 |
1995.11.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, JI-HYUN;SHIN, HONG-JAE;HWANG, BYUNG-KEUN;CHUNG, U-IN |
分类号 |
H01L21/3205;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):H01L21/283 |
主分类号 |
H01L21/3205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|