Method of forming semiconductor memory device by selectively forming an insulating film on the drain region

摘要

A semiconductor memory device capable of being electrically written and erased comprising a floating gate, wherein, a silicon nitride film is incorporated between the drain region and the floating gate. Also claimed is a method for forming the same, which comprises forming a drain region on selected portions of a semiconductor substrate; forming a silicon nitride film or a silicon oxinitride film or a silicon carbide film or an aluminum oxide film selectively on the drain region; coating the substrate with a gate oxide film; and establishing a floating gate and thereafter a control gate.