| 摘要 |
FIELD: semiconductor engineering. SUBSTANCE: process of applying boron-containing layers onto surfaces of semiconductor materials is carried out at 50-200 C from gas phase composed of (in vol.%): silicon tetrachloride, 16-17; oxygen, 16-17; boron trichloride, 1.2-2.5; and nitrogen monoxide, the balance. EFFECT: reduced temperature and simplified procedure. |
