SUBSTRATES FOR THE GROWTH OF 3C-SILICON CARBIDE.

摘要

A substrate for the growth of monocrystalline beta -SiC is formed by providing a body of monocrystalline hexagonal material having a planar surface with a lattice parameter that is within +/-5% of the lattice parameter of 6H alpha -SiC in the basal plane and growing a body of monocrystalline cubic material on the surface to provide a planar cubic material surface that is without grain boundaries, subgrain boundaries, double positioning boundaries, and pits. The cubic material, for example TiC, ZrC, HfC, or TiN, has a rock salt structure and a lattice parameter within +/-5% of the lattice parameter of beta -SiC. Monocrystalline beta -SiC can be nucleated and grown on the surface of the cubic material.